ProjectINTERFAST – Gated INTERfaces for FAST Information Processing - INTERFAST

Basic data

Gated INTERfaces for FAST Information Processing - INTERFAST
01/05/2021 to 30/04/2024
Abstract / short description:
INTERFAST will develop a novel technological platform for the voltage control of interfacial magnetism. The key idea is to manipulate, via a gate, the hybrid states at the interface between a magnetic material and an organic layer, in a way to affect the effective spin-orbit coupling at such an interface. This will allow us to control the interfacial magnetism of a wide range of magnetic and supporting compounds, thus providing a universal platform, which is not specific to the rare magnets exhibiting massive voltage-control magneto-crystalline anisotropy coefficients. INTERFAST will demonstrate the applicability of this technology to a range of key spintronic functions, encompassing voltage control of magnetisation reversal at fJ/bit energy cost, drastic reduction of the spin-orbit-torque switching currents, and ultrafast THz information processing in all-metallic spintronic devices aided by gateable hybridisation unit.
hybrid-organic metal
synchrotron radiation
ultra-high vacuum

Involved staff


Institute of Physical Chemistry (IPTC)
Department of Chemistry, Faculty of Science

Local organizational units

Institute of Physical Chemistry (IPTC)
Department of Chemistry
Faculty of Science

will be deleted permanently. This cannot be undone.